On the T-RAM and FED-RAM memory mechanism

We take a closer look on the memory mechanism (“store”) of the T-RAM and FED-RAM memory cells, with the help of extensive numerical simulations. The resulting carrier profiles demonstrate that the accepted interpretation of the memory mechanism as the accumulation (“1”) or depletion (“0”) of holes, under the gate above the p-base, is incorrect. Instead, it is the state (equilibrium or not) of the depletion regions on the sides of the p-base, that determine the stored state of the cell.