DocumentCode :
3694872
Title :
Epitaxial layer transfer technology and application
Author :
Takao Yonehara
Author_Institution :
Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054 USA
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
Epitaxial Layer and Device Layer Transfer Technologies in Si and GaAs systems are reviewed from principle, processes, devices, to application systems over decades. Various applications span from SOI-Epi wafering, PV cells and Kerf-less Si PV Epi wafers, Flexible CMOS devices, Free standing thin IC chips, CMOS Si imagers, Solid-state optical scanner and Three dimensional integrated IC. The applications have been enabled by the key roles of the separation layer of removability and thermal stability for Epitaxial and Device Layers Transfer Technology.
Keywords :
"Silicon","CMOS integrated circuits","CMOS technology","Epitaxial growth","Decision support systems","Transistors"
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
Type :
conf
DOI :
10.1109/S3S.2015.7333529
Filename :
7333529
Link To Document :
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