Title :
0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes
Author :
Shin-ichi O´uchi;Yongxun Liu;Tadashi Nakagawa;Wataru Mizubayashi;Shinji Migita;Noriyuki Morita;Hiroyuki Ota;Yuki Ishikawa;Junichi Tsukada;Hanpei Koike;Meishoku Masahara;Kazuhiko Endo;Takashi Matsukawa
Author_Institution :
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Abstract :
This paper demonstrates a 0.8-V rail-to-rail operational amplifier (op-amp) for ultra-low-power Internet-of-Things (IoT) sensor nodes. To suppress the leakage current in the logic part, a FinFET technology with 0.4-V threshold voltage (Vt), is chosen. To realize the rail-to-rail operation in the small common-mode (CM) voltage headroom, VDD–Vt, a 4-stage chopper-stabilized topology with high-pass filters, multi-path hybrid-nested Miller compensation, and a push-pull output stage are introduced. A near-Vt amplifier is also introduced to the second stage to boost the gain. The fabricated op-amp shows 1MHz Gain-Bandwidth in whole of the CM voltage range.
Keywords :
"FinFETs","Topology","Choppers (circuits)","Voltage measurement","Gain","Yttrium"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333536
