Impact of supercoupling effect on mobility enhancement in UTBB SOI in dynamic threshold mode

We investigate the supercoupling effect in N and P-type UTBB SOI transistors with dynamic threshold operation. The transconductance and mobility are analyzed for two silicon film thicknesses in conventional (grounded back gate) and dynamic threshold (eDT: VG2=kVG1) modes. Experiments show that the supercoupling enhances the volume inversion effect and improves the impact of the k-factor, leading to higher transconductance and mobility.