• DocumentCode
    3694893
  • Title

    A 1kb single-side read 6T sub-threshold SRAM in 180 nm with 530 Hz frequency 3.1 nA total current and 2.4 nA leakage at 0.27 V

  • Author

    Marc Pons;Thanh-Chau Le;Claude Arm;Daniel Séverac;Stéphane Emery;Christian Piguet

  • Author_Institution
    CSEM Centre Suisse d´É
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 1kb 180 nm single-side read 6T sub-threshold SRAM has been designed focusing on manufacturability, integrated and measured satisfactorily. Silicon measurements show 3.1 nA total current, 2.4 nA leakage, at 530 Hz for a minimum operating voltage of 0.27 V with no bit errors. The area of the block is 22´350 μm2.
  • Keywords
    "Random access memory","Transistors","Current measurement","Temperature measurement","Frequency measurement","Robustness","Power demand"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333550
  • Filename
    7333550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694893