• DocumentCode
    3695715
  • Title

    A method for health monitoring of power MOSFETs based on threshold voltage

  • Author

    Lei Ren;Chunying Gong;Qian Shen;Huizhen Wang

  • Author_Institution
    College of Automation Engineering, Nanjing University of Aeronautics &
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1729
  • Lastpage
    1734
  • Abstract
    The prognostics and health management (PHM) of airborne equipment plays an important role in ensuring the security of flight and improving the ratio of combat readiness. The widely use of electronics equipment in aircraft is now making the PHM technology for power electronics devices become more important. It is the main circuit devices that are proved to have high failure rate in power equipment. This paper does some research about the fault feature extraction of power metal oxide semiconductor field effect transistor (MOSFET). Firstly, the failure mechanism and failure feature of active power switches are analyzed in this paper, and the junction temperature is indicated to be an overall parameter for the health monitoring of MOSFET. Then, a health monitoring method based on the threshold voltage is proposed. For buck converter, a measuring method of the threshold voltage is proposed, which is simple to realize and of high precision. Finally, the simulation and experimental results verify the effectiveness of the proposed measuring method.
  • Keywords
    "Temperature measurement","MOSFET","Threshold voltage","Junctions","Degradation","Aging","Temperature"
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics and Applications (ICIEA), 2015 IEEE 10th Conference on
  • Type

    conf

  • DOI
    10.1109/ICIEA.2015.7334390
  • Filename
    7334390