Title :
No pumping at 450°C with electrodeposited copper TSV
Author :
Kazuo Kondo;Shingo Mukahara;Masayuki Yokoi;Jin Onuki
Author_Institution :
Department of Chemical Engineering, Osaka, Prefecture University, 1-1, Gakuen-chyo, Sakai, 599-8531, Japan
Abstract :
Thermal expansion coefficient(TEC) mismatch between the silicon and copper causes serious problems in on chip and microelectronics packaging. One example is TSV pumping for the via middle process. Higher temperature exposure of 400–600°C during the wiring process causes TSV pumping. The filled copper destroys wiring above TSV.
Keywords :
"Additives","Copper","Annealing","Thermal expansion","Wiring","Heat pumps","Resins"
Conference_Titel :
3D Systems Integration Conference (3DIC), 2015 International
DOI :
10.1109/3DIC.2015.7334559
