• DocumentCode
    3697265
  • Title

    Experimental Investigation of SELs in SiT8003 MEMS-Oscillators

  • Author

    Alexander S. Tararaksin;Leonid N. Kessarinskiy;Alexander A. Pechenkin;Alexandra V. Demidova;Andrey V. Yanenko;Dmitry V. Boychenko;Alexander Y. Nikiforov

  • Author_Institution
    Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ., Moscow, Russia
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    SEEs in SiT8003 MEMS-oscillator were investigated. Irradiation was provided with ion-cyclotron and picosecond focused laser. SEL, SEU were observed. Threshold LET, saturation cross-section were estimated. High SEE sensitivity of SiT8003 is shown.
  • Keywords
    "Radiation effects","CMOS integrated circuits","Ions","Crystals","Testing","Micromechanical devices","Microelectronics"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336709
  • Filename
    7336709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697265