Title :
Experimental Investigation of SELs in SiT8003 MEMS-Oscillators
Author :
Alexander S. Tararaksin;Leonid N. Kessarinskiy;Alexander A. Pechenkin;Alexandra V. Demidova;Andrey V. Yanenko;Dmitry V. Boychenko;Alexander Y. Nikiforov
Author_Institution :
Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ., Moscow, Russia
fDate :
7/1/2015 12:00:00 AM
Abstract :
SEEs in SiT8003 MEMS-oscillator were investigated. Irradiation was provided with ion-cyclotron and picosecond focused laser. SEL, SEU were observed. Threshold LET, saturation cross-section were estimated. High SEE sensitivity of SiT8003 is shown.
Keywords :
"Radiation effects","CMOS integrated circuits","Ions","Crystals","Testing","Micromechanical devices","Microelectronics"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336709
