Title :
Heavy Ion SEU Test Data for 32nm SOI Flip-Flops
Author :
R. C. Quinn;J. S. Kauppila;T. D. Loveless;J. A. Maharrey;J. D. Rowe;M. W. McCurdy;E. X. Zhang;M. L. Alles;B. L. Bhuva;R. A. Reed;W. T. Holman;M. Bounasser;K. Lilja;L. W. Massengill
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
Two 32nm SOI single-event upset test chips have been irradiated at LBNL and TAMU heavy ion test facilities. The test chips include unhardened and RHBD designs such as DICE, LEAP DICE, and stacking devices. SEU cross-section data are presented for the hardened and unhardened flip-flop designs across test facility, beam tune, angle of incidence, and clock frequency.
Keywords :
"Flip-flops","Clocks","Radiation effects","Testing","Single event upsets","Logic gates","Radiation hardening (electronics)"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336712
