Title :
Heavy Ion Single Event Effects Measurements of 512Mb ISSI SDRAM
Author :
Farokh Irom;Mehran Amrbar
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
Heavy ion single-event measurements on 512Mb ISSI synchronous dynamic random-access memory (SDRAM) are reported. Heavy ion susceptibility to single event latchup (SEL), single bit upsets (SBUs), double bit upsets (DBUs), multiple bit upset (MBUs) and single effect functional interrupts (SEFIs) were investigated.
Keywords :
"SDRAM","Radiation effects","Performance evaluation","Protons","Ion beams","Temperature measurement"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336713
