DocumentCode :
3697271
Title :
Heavy Ion Testing of Commercial GaN Transistors in the Radio Frequency Spectrum
Author :
Sarah E. Armstrong;Ken Bole;Holly Bradley;Ethan Johnson;James Staggs;Walter Shedd;Patrick L. Cole;Casey H. Rice;J. David Ingalls;Casey C. Hedge;Adam R. Duncan;Brian D. Olson
Author_Institution :
Crane Div., Naval Surface Warfare Center, Crane, IN, USA
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
6
Abstract :
Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore space environment stresses on these emerging technologies. Findings indicate that gate leakage degradation is a key parameter to consider when selecting devices. Variations in the manufacturing process may drive product selection for use in harsh environments.
Keywords :
"Radio frequency","Logic gates","Testing","Gallium nitride","Radiation effects","HEMTs","MODFETs"
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
Type :
conf
DOI :
10.1109/REDW.2015.7336715
Filename :
7336715
Link To Document :
بازگشت