Title :
Heavy-Ion Induced SETs in 32nm SOI Inverter Chains
Author :
Jeffrey A. Maharrey;Jeffrey S. Kauppila;Rachel C. Quinn;T. Daniel Loveless;En Xia Zhang;W. Timothy Holman;Bharat L. Bhuva;Lloyd W. Massengill
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
A comprehensive data set of heavy-ion induced single-event transients has been collected for inverter chains fabricated in the IBM 32nm partially-depleted silicon-on-insulator technology across various bias voltages, transistor variants, ion energies and angles of incidence.
Keywords :
"Inverters","MOS devices","Threshold voltage","Pulse measurements","Silicon-on-insulator","Transient analysis","Performance evaluation"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336717
