Title :
Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests
Author :
Brian D. Olson;J. David Ingalls;Casey H. Rice;Casey C. Hedge;Patrick L. Cole;Adam R. Duncan;Sarah E. Armstrong
Author_Institution :
Crane Div., Naval Surface Warfare Center, Crane, IN, USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is characterized.
Keywords :
"Logic gates","Radiation effects","Gallium nitride","Leakage currents","Current measurement","HEMTs","MODFETs"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336720
