Title :
Radiation Evaluation of Ferroelectric Random Access Memory Embedded in 180nm CMOS Technology
Author :
B. A. Dahl;J. Cruz-Colon;R. C. Baumann;J. A. Rodriguez;C. Zhou;J. Rodriguez-Latorre;S. Khan;T. San;T. Trinh
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
Radiation and Temperature Characterization results of a 2T-2C ferroelectric random access memory (FRAM) are presented. This includes Total Ionizing Dose (TID), Single Event Effects (SEE) and Temperature evaluation at 215 °C.
Keywords :
"Random access memory","Nonvolatile memory","Ferroelectric films","Reliability","Testing","Temperature sensors","Radiation effects"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336729
