DocumentCode
3697306
Title
mLogic: All spin logic device and circuits
Author
J.-G. Jimmy Zhu;D. M. Bromberg;M. Moneck;V. Sokalski;L. Pileggi
Author_Institution
Department of Electrical and Computer Engineering, Carnegie Mellon University
fYear
2015
Firstpage
1
Lastpage
2
Abstract
Emerging electronic devices utilizing spin based effects and phenomena, such as spin transfer torque magnetic random access memory (STT-MRAM), have gathered a great spectrum of effort, ranging from basic scientific research to technology development [1][2][3][4]. In this talk, we present a novel all spin logic circuits, referred to as mLogic, based on a four terminal device, referred to as mCell, that utilizes Spin Hall Effect (SHE) along with Dzyaloshinskii-Moriya-Interaction (DMI) at metallic interfaces for its operation [5].
Keywords
"Magnetic tunneling","Magnetic domain walls","Magnetic domains","Switches","Magnetic resonance imaging","Magnetic switching","Current density"
Publisher
ieee
Conference_Titel
Energy Efficient Electronic Systems (E3S), 2015 Fourth Berkeley Symposium on
Type
conf
DOI
10.1109/E3S.2015.7336781
Filename
7336781
Link To Document