Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives

The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].