Novel device functionalities enabled by substitutional doping against native propensity in 2D semiconductors

Over the last few decades, advances in electronics have fundamentally changed the way we use energy in our everyday life. While the electronic devices have become faster, smarter and compact, the energy consumption for per bit operation have not reduced significantly. With the motivation to reduce energy consumption in electronic systems, we study layered transition metal dichalcogenides (TMDs), which have attracted tremendous attention in recent years as the key semiconducting component for novel energy-efficient electrical, optoelectronic and spintronic devices. Many of such devices require bipolar conduction and tunable carrier density. However, due to omnipresent native defects and band offset, normally only a single type of doping is stable for a specific TMD.