Title :
Research of high performance GeSn/Ge heterostructure photodiodes
Author :
Hui Cong;Chunlai Xue;Buwen Cheng;Chuanbo Li;Qiming Wang
Author_Institution :
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Bejing, P R China
Abstract :
Surface-illuminated GeSn/Ge p-i-n photodiodes with Ge0.943Sn0.057 active layer on p+-Ge substrate were fabricated. A quite high rectification ratio of 3 × 104 at ±1V was obtained with a diameter of 30nm. The device shows a low dark current density of 176.3mA/cm2 at a reverse bias of −1V.
Keywords :
"Optical device fabrication","Optical films","Dark current","PIN photodiodes","Substrates","Metals"
Conference_Titel :
Optoelectronics Global Conference (OGC), 2015
Print_ISBN :
978-1-4673-7731-7
DOI :
10.1109/OGC.2015.7336867
