DocumentCode :
3697940
Title :
A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration
Author :
J.-O. Plouchart;F. Wang;A. Balteanu;B. Parker;M. A. T. Sanduleanu;M. Yeck;V. H.-C. Chen;W. Woods;B. Sadhu;A. Valdes-Garcia;X. Li;D. Friedman
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
319
Lastpage :
322
Abstract :
A self-healing mmWave SoC integrating an 8052 microcontroller with 12kB of memory, an ADC, a temperature sensor, and a 3-stage cascode 60GHz LNA, implemented in a 32nm SOI CMOS technology exhibits a peak gain of 21dB, an average 3.3dB NF from 53 to 62GHz and 18mW power consumption. An indirect NF sensing algorithm was implemented on the integrated uC, which enables an adaptive biasing algorithm to reduce the 60GHz NF sigma and LNA power consumption by 37 and 40%, respectively, across P,V,T.
Keywords :
"Noise measurement","Temperature measurement","Current measurement","Semiconductor device measurement","Voltage measurement","Transmission line measurements","Sensors"
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
Type :
conf
DOI :
10.1109/RFIC.2015.7337769
Filename :
7337769
Link To Document :
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