• DocumentCode
    3698542
  • Title

    A 200-MS/s 98-dB SNR track-and-hold in 0.25-um GaN HEMT

  • Author

    SungWon Chung;Hae-Seung Lee

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, MA 02139, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In order to overcome the design challenges of GaN HEMT leakage and Schottky diode turn-on, a GaN track-and-hold (T/H) circuit with 20-V pseudo-differential input swing consists of an asymmetric gate device followed by a symmetric gate device. The GaN T/H provides 98-dB SNR at 200 MS/s while drawing 195 mA.
  • Keywords
    "Decision support systems","Hafnium"
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CICC.2015.7338405
  • Filename
    7338405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3698542