DocumentCode
3698550
Title
A 20 Gb/s 0.3 pJ/b single-ended die-to-die transceiver in 28 nm-SOI CMOS
Author
Behzad Dehlaghi;Anthony Chan Carusone
Author_Institution
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, Canada
fYear
2015
Firstpage
1
Lastpage
4
Abstract
A low-power transceiver architecture for die-to-die applications is presented. The proposed transceiver employs CMOS logic-style circuits and a passive equalizer in the transmitter to reduce the power consumption. Single-ended signaling without a shared reference voltage is used to minimize the number of required signal traces and packaging bumps. A transceiver prototype is fabricated in 28 nm STM FD-SOI CMOS technology and it operates at 20 Gb/s and 16.4 Gb/s data rates over different channels with 5.9 and 7.1 dB of loss relative to DC (10.7 and 12.9 dB total loss) at the Nyquist frequency while consuming 0.30 and 0.33 pJ/bit excluding clocking circuits, respectively.
Keywords
"Transmitters","Receivers","Transceivers","CMOS integrated circuits","Bandwidth","Clocks","Multiplexing"
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2015 IEEE
Type
conf
DOI
10.1109/CICC.2015.7338413
Filename
7338413
Link To Document