Title :
Low-operating-energy membrane-buried heterostructure lasers on SiO2/Si Substrate
Author :
Shinji Matsuo;Takuro Fujii;Koji Takeda
Author_Institution :
NTT Device Technology Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, Japan
fDate :
6/1/2015 12:00:00 AM
Abstract :
Membrane-buried heterostructure lasers are integrated on SiO2/Si substrate by using a direct bonding technique. The large optical confinement factor leads to ultralow operating energy, which is critical for the datacom and computercom networks.
Keywords :
"Substrates","Silicon","Fabrication","Indium phosphide","III-V semiconductor materials","Photonics","Optical signal processing"
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2015
Electronic_ISBN :
2166-8892
DOI :
10.1109/OECC.2015.7340231
