A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology

A millimeter-wave frequency quadrupler implemented in BiCMOS 55 nm process from STMicroelectronics for in situ load-pull D band characterization is proposed. The circuit consists on cascaded doublers with intermediate power amplifiers to increase the output power. Two high-pass filters allow the rejection of the first and 2^nd harmonics to obtain pure 4^th harmonic output frequency. The measured peak output power is 0.5 dBm at 150 GHz with 14 GHz 3dB bandwidth and a DC power consumption of 0.63W. A good agreement between measurement and simulation results is observed.