• DocumentCode
    3699908
  • Title

    90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters

  • Author

    J. Hoffman;J.R. Gosse;S. Shopov;S. P. Voinigescu;J.J. Pekarik;R Camillo-Castillo;V. Jain;D. Harame

  • Author_Institution
    CE Department, University of Toronto, Toronto, ON, M5S 3G4, Canada
  • fYear
    2015
  • Firstpage
    157
  • Lastpage
    160
  • Abstract
    An 80GHz bandwidth distributed amplifier with 7Vpp differential output swing and PO1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.
  • Keywords
    "Bandwidth","Optical switches","Loss measurement","Insertion loss","Optical transmitters","Silicon germanium"
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/BCTM.2015.7340568
  • Filename
    7340568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3699908