DocumentCode :
3700854
Title :
Surface charging of dielectrics by secondary emission and determination of emission yield
Author :
B. Gross;H. von Seggern;A. Berraissoul
Author_Institution :
Institute for Electroacoustics, Technical University of Darmstadt, Merckstrasse 25, D-6100 Darmstadt, Federal Republic of Germany
fYear :
1985
Firstpage :
608
Lastpage :
615
Abstract :
A new method for the determination of the secondary emission yield of dielectrics is discussed. Results are given for Teflon, Aclar, Kapton, and Mylar. Surfaces of dielectrics irradiated with electrons of energies above 2 keV become negatively charged. For lower energies the number of back-scattered primaries plus backward emitted secondaries eventually exceeds that of the incoming primaries. Then the surface can be positively charged [1]. It was recognized that this effect might lead to a simple method for the determination of the total backscatter plus secondary emission yield [2]. This effect is used to determine the total emission yield curve in one run with a single beam energy.
Keywords :
"Current measurement","Electrodes","Electric potential","Dielectrics","Backscatter","Electron beams","Dielectric measurement"
Publisher :
ieee
Conference_Titel :
Electrets (ISE 5), 1985 5th International Symposium on
Print_ISBN :
000-0-0000-0000-0
Type :
conf
DOI :
10.1109/ISE.1985.7341545
Filename :
7341545
Link To Document :
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