DocumentCode :
3701028
Title :
First demonstration of Ge waveguide platform on Ge-on-insulator for mid-infrared integrated photonics
Author :
J. Kang;M. Takenaka;S. Takagi
Author_Institution :
Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
We demonstrate the proof-of-concept of Ge mid-infrared integrated photonics on Ge-on-insulator (GOI) wafer. Ge rib waveguides enable sharp bend at 2-μm wavelength band. The intensity modulation based on free-carrier absorption in Ge is also demonstrated by carrier injection.
Keywords :
"Optical waveguides","Photonics","Optical device fabrication","Optical attenuators","Silicon","Optical modulation","Optical imaging"
Publisher :
ieee
Conference_Titel :
Optical Communication (ECOC), 2015 European Conference on
Type :
conf
DOI :
10.1109/ECOC.2015.7341722
Filename :
7341722
Link To Document :
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