High-sensitivity wideband THz detectors based on GaN HEMTs with integrated bow-tie antennas

This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (Ter-aFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are integrated on-chip with bow-tie antennas. The broadband sensitivity of the fabricated detectors was characterized in the frequency range from 0.4 up to 1.18 THz. We reach record values of optical noise equivalent power (NEP) down to 57 pW/√Hz at 0.9 THz. These values are the result of antenna and fabrication process optimization as well as modelling including plasmonic effects.