Title :
U-band pHEMT divide-by-three ILFD
Author :
Wei-Ling Chang;Chinchun Meng;Kuan-Chang Tsung;Guo-Wei Huang
Author_Institution :
Department of Electrical Engineering National Chiao Tung University Hsinchu 300, Taiwan
Abstract :
A fully integrated 0.15-μm AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated in this paper. The Marchand Balun provides broadband and balanced differential signals at millimeter wave frequencies due to the low loss GaAs semi-insulating substrate. The divide-by-three ILFD performs a locking range from 44 GHz to 47 GHz at the supply voltage of 6 V and the core current consumption is 6.24 mA.
Keywords :
"Frequency conversion","PHEMTs","Impedance matching","Heterojunction bipolar transistors","Substrates","Topology","Sensitivity"
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
DOI :
10.1109/EuMIC.2015.7345056