• DocumentCode
    3703791
  • Title

    0.25 ?m AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

  • Author

    Mohammad A Alim;Ali A Rezazadeh;Christophe Gaquiere;Mayahsa M Ali;Norshakila Haris;Peter B Kyabaggu;Yongjian Zhang

  • Author_Institution
    Microwave and Communication System Group, School of Electrical and Electronics Engineering, The University of Manchester, Manchester, M13 9PL, UK
  • fYear
    2015
  • Firstpage
    140
  • Lastpage
    143
  • Abstract
    0.25 μm gate AlGaN/GaN/SiC HEMT´s nonlinearity modelling and characterization over a wide temperature and frequency have been studied for the first time. The nonlinearity of these devices has been carried out using a two-tone intermodulation distortion. An empirical analytical model has been developed and good agreement was established between the simulated and measured data. This result is valuable for the future design optimizations of the advanced GaN based MMIC´s operating at high temperature.
  • Keywords
    "Temperature measurement","HEMTs","Transconductance","Gallium nitride","Aluminum gallium nitride","Wide band gap semiconductors","Microwave circuits"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
  • Type

    conf

  • DOI
    10.1109/EuMIC.2015.7345088
  • Filename
    7345088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3703791