Title :
0.25 ?m AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range
Author :
Mohammad A Alim;Ali A Rezazadeh;Christophe Gaquiere;Mayahsa M Ali;Norshakila Haris;Peter B Kyabaggu;Yongjian Zhang
Author_Institution :
Microwave and Communication System Group, School of Electrical and Electronics Engineering, The University of Manchester, Manchester, M13 9PL, UK
Abstract :
0.25 μm gate AlGaN/GaN/SiC HEMT´s nonlinearity modelling and characterization over a wide temperature and frequency have been studied for the first time. The nonlinearity of these devices has been carried out using a two-tone intermodulation distortion. An empirical analytical model has been developed and good agreement was established between the simulated and measured data. This result is valuable for the future design optimizations of the advanced GaN based MMIC´s operating at high temperature.
Keywords :
"Temperature measurement","HEMTs","Transconductance","Gallium nitride","Aluminum gallium nitride","Wide band gap semiconductors","Microwave circuits"
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
DOI :
10.1109/EuMIC.2015.7345088
