DocumentCode :
3703802
Title :
A 246 GHz fundamental source with a peak output power of 2.8 dBm
Author :
Neelanjan Sarmah;Bernd Heinemann;Ullrich R. Pfeiffer
Author_Institution :
IHCT, University of Wuppertal, 42119 Wuppertal, Germany
fYear :
2015
Firstpage :
184
Lastpage :
187
Abstract :
A 246 GHz source for imaging and incoherent high data rate communication applications is presented. The source consists of a fundamental free-running Colpitts oscillator cascaded with a differential common base (CB) buffer stage and a 3-stage power amplifier (PA). The circuit has been fabricated in a 130 nm SiGe HBT technology with fT/fmax of 300/500 GHz. At 246 GHz, the measured output power is 2.8 dBm and the overall DC to RF conversion efficiency is 0.43%. The available output power from the oscillator alone is -4.2 dBm (after correcting for the PA gain of 10 dB and another 3 dB loss due to output pad and balun at 246 GHz).
Keywords :
"Oscillators","Silicon germanium","Power generation","Frequency measurement","Heterojunction bipolar transistors","Impedance matching","Imaging"
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
Type :
conf
DOI :
10.1109/EuMIC.2015.7345099
Filename :
7345099
Link To Document :
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