Dynamic behaviour of a low-noise amplifier GaN MMIC under input power overdrive

This paper presents the analysis of a highly robust low-noise amplifier subjected to high input power stress conditions. The LNA is realized in coplanar technology using the 0.25μm GaN-HEMT MMIC process from FBH, and a novel stacked topology at the first stage. The LNA survived 43dBm of input power overdrive at 5GHz measured in a coaxial test-fixture. The nonlinear measurement setup and the high power overdrive behaviour of the LNA are analized in this work. The destruction mechanism of this LNA was identified to be the melting of air bridges in a spiral inductor.