DocumentCode :
3704492
Title :
Plastic packaged E-mode transistors to 50 GHz with integrated ESD protection and bias control
Author :
Henrik Morkner
Author_Institution :
HTK Microwave, Palo Alto, California, USA
fYear :
2015
Firstpage :
793
Lastpage :
796
Abstract :
Discrete transistors are still used extensively in many custom applications. The price-to-performance ratio is advantageous when a custom MMIC is not warranted. This paper details a new generation of DC-50 GHz enhancement mode, 0.15μm gate, plastic package, PHEMT devices. These not only provide superior performance of 15dB gain and 0.7dB NF at 20 GHz, but integrate both DC gate bias control with power down and ESD protection to 500V.
Keywords :
"Electrostatic discharges","Logic gates","Gain","PHEMTs","Noise measurement"
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2015 European
Type :
conf
DOI :
10.1109/EuMC.2015.7345883
Filename :
7345883
Link To Document :
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