• DocumentCode
    3704492
  • Title

    Plastic packaged E-mode transistors to 50 GHz with integrated ESD protection and bias control

  • Author

    Henrik Morkner

  • Author_Institution
    HTK Microwave, Palo Alto, California, USA
  • fYear
    2015
  • Firstpage
    793
  • Lastpage
    796
  • Abstract
    Discrete transistors are still used extensively in many custom applications. The price-to-performance ratio is advantageous when a custom MMIC is not warranted. This paper details a new generation of DC-50 GHz enhancement mode, 0.15μm gate, plastic package, PHEMT devices. These not only provide superior performance of 15dB gain and 0.7dB NF at 20 GHz, but integrate both DC gate bias control with power down and ESD protection to 500V.
  • Keywords
    "Electrostatic discharges","Logic gates","Gain","PHEMTs","Noise measurement"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2015 European
  • Type

    conf

  • DOI
    10.1109/EuMC.2015.7345883
  • Filename
    7345883