• DocumentCode
    3704541
  • Title

    GaN Schottky diodes for RF wireless power detection and conversion

  • Author

    Timothy Boles;Gary Lopes

  • Author_Institution
    MACOM Technology Solutions, Lowell, MA 01851, USA
  • fYear
    2015
  • Firstpage
    1003
  • Lastpage
    1006
  • Abstract
    RF and microwave frequency GaN-on-Silicon high reverse breakdown voltage/high current handling Schottky diodes capable of being integrated into complex MMIC circuitry have been developed for application into wireless energy transmission systems. In the near future, these Schottky diode based MMICs will revolutionize power transmission and enable a 120 year old idea to become a practical reality.
  • Keywords
    "Schottky diodes","Gallium nitride","Anodes","Electric breakdown","Silicon","Wireless communication"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2015 European
  • Type

    conf

  • DOI
    10.1109/EuMC.2015.7345935
  • Filename
    7345935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3704541