DocumentCode
3704580
Title
A compact tri-band GaN voltage-mode class-D/S PA for future 0.8/1.8/2.6 GHz LTE picocell applications
Author
Andreas Wentzel;Monica Martinez-Mendoza;Wolfgang Heinrich
Author_Institution
Ferdinand-Braun-Institut (FBH), Leibniz-Institut f?r H?chstfrequenztechnik, Berlin, Germany
fYear
2015
Firstpage
1160
Lastpage
1163
Abstract
This paper presents a compact tri-band voltage-mode class-S power amplifier module suitable for the LTE frequency bands of 0.8, 1.8 and 2.6 GHz. The demonstrator uses a broadband GaN voltage-mode PA MMIC and a hybrid SMD element tri-band filter introducing transmission zeros between the pass bands for improved isolation. Applying pulse-width modulated input signals the digital PA achieves a maximum output power of 5 W at 0.8 GHz, 2.2 W at 1.8 GHz, and 1.4 W at 2.6 GHz. Peak drain efficiency is 87%, 56% and 41% for 0.8 GHz, 1.8 GHz and 2.6 GHz, respectively. PAE values of 40% and a large-signal gain of 33 dB are reached.
Keywords
"Power amplifiers","Gallium nitride","Gain","MMICs","Power generation","Microwave amplifiers","Microwave communication"
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2015 European
Type
conf
DOI
10.1109/EuMC.2015.7345974
Filename
7345974
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