• DocumentCode
    3704580
  • Title

    A compact tri-band GaN voltage-mode class-D/S PA for future 0.8/1.8/2.6 GHz LTE picocell applications

  • Author

    Andreas Wentzel;Monica Martinez-Mendoza;Wolfgang Heinrich

  • Author_Institution
    Ferdinand-Braun-Institut (FBH), Leibniz-Institut f?r H?chstfrequenztechnik, Berlin, Germany
  • fYear
    2015
  • Firstpage
    1160
  • Lastpage
    1163
  • Abstract
    This paper presents a compact tri-band voltage-mode class-S power amplifier module suitable for the LTE frequency bands of 0.8, 1.8 and 2.6 GHz. The demonstrator uses a broadband GaN voltage-mode PA MMIC and a hybrid SMD element tri-band filter introducing transmission zeros between the pass bands for improved isolation. Applying pulse-width modulated input signals the digital PA achieves a maximum output power of 5 W at 0.8 GHz, 2.2 W at 1.8 GHz, and 1.4 W at 2.6 GHz. Peak drain efficiency is 87%, 56% and 41% for 0.8 GHz, 1.8 GHz and 2.6 GHz, respectively. PAE values of 40% and a large-signal gain of 33 dB are reached.
  • Keywords
    "Power amplifiers","Gallium nitride","Gain","MMICs","Power generation","Microwave amplifiers","Microwave communication"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2015 European
  • Type

    conf

  • DOI
    10.1109/EuMC.2015.7345974
  • Filename
    7345974