Growth and characterization of β-In2S3 thin films prepared by chemical spray pyrolysis technique with and without alcoholic solution

Beta indium sulfide (β-In₂S₃) thin films were deposited by Chemical Spray Pyrolysis technique, a fast, cost effective and vacuum free method with alcoholic and aqueous solution using InCl₃ and thiourea as source of indium and sulfur respectively. All films were deposited onto glass substrate with different temperatures. Characterization of the films was carried out by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), Atomic Force Microscopy (AFM) and optical transmission. The structural analysis reveals films with (0 0 12) as main peak for all samples in all case. (107) peak appeared only in films deposited without alcohol with high intensity at 300°C substrate temperature. SEM images shows films dense, continuous, compact and homogeneous without void but one noted cracks in films prepared from aqueous solution. EDS tables show the presence of sulfur and indium in all samples with good stoichiometry. AFM micrographs reveal rough films and variation of grains size. Optical analysis to determine band gap gives band gap varying from 2.54eV to 2.81eV for samples deposited from aqueous solution and band gap between 2.70eV to 2.89eV for samples prepared from alcoholic solution.