DocumentCode
3705464
Title
Design and signal integrity analysis of high bandwidth memory (HBM) interposer in 2.5D terabyte/s bandwidth graphics module
Author
Hyunsuk Lee;Kyungjun Cho;Heegon Kim;Sumin Choi;Jaemin Lim;Hyunwoo Shim;Joungho Kim
Author_Institution
Department of Electrical Engineering, KAIST, Daejeon, South Korea
fYear
2015
Firstpage
145
Lastpage
148
Abstract
Spurred by the industrial demands for terabyte/s bandwidth graphics module, high bandwidth memory (HBM) has been emerged to overcome the limitations of conventional DRAMs. Additionally, due to the fine pitch and high density interconnect routing between GPU and 4 HBMs in 2.5D terabyte/s bandwidth graphics module, HBM interposer has also been to the force. However, several signal integrity issues of the HBM interposer occur due to the manufacturing process constraints. In this paper, we design the HBM interposer using 6 layers redistribution layer (RDL) and TSVs in 2.5D terabyte/s bandwidth graphics module. And then, in the designed HBM interposer, electrical performance of the HBM interposer channels using M1, M3, and M5 layer is analyzed by simulation in the frequency-and time-domain. With the simulation results, it is observed that the designed HBM interposer shows good signal integrity.
Keywords
"Graphics processing units","Bandwidth","Simulation","Time-domain analysis","Insertion loss","Graphics","Through-silicon vias"
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2015 IEEE 24th
Print_ISBN
978-1-5090-0038-8
Type
conf
DOI
10.1109/EPEPS.2015.7347149
Filename
7347149
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