• DocumentCode
    3706072
  • Title

    Schottky barrier carbon nanotube transistors Op-Amp circuit

  • Author

    Wafa Makni;Montasar Najari;Hekmet Samet;Montasar Najari

  • Author_Institution
    LETI Laboratory, National School of Engineering of Sfax, Sfax, Tunisia
  • fYear
    2015
  • fDate
    3/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper presents a computationally efficient Raychowdhury compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). In order to achieve an accurate compact model, shot noise sources is added. Then, for the assessment of the SB on circuit performances, an operational amplifier (Op-Amp) is designed using the SB-CNTFET compact model, and results are compared with a conventional CNTFET.
  • Keywords
    "CNTFETs","Operational amplifiers","Integrated circuit modeling","Schottky barriers","Gain","Mathematical model"
  • Publisher
    ieee
  • Conference_Titel
    Systems, Signals & Devices (SSD), 2015 12th International Multi-Conference on
  • Type

    conf

  • DOI
    10.1109/SSD.2015.7348239
  • Filename
    7348239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706072