Title :
Schottky barrier carbon nanotube transistors Op-Amp circuit
Author :
Wafa Makni;Montasar Najari;Hekmet Samet;Montasar Najari
Author_Institution :
LETI Laboratory, National School of Engineering of Sfax, Sfax, Tunisia
fDate :
3/1/2015 12:00:00 AM
Abstract :
This paper presents a computationally efficient Raychowdhury compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). In order to achieve an accurate compact model, shot noise sources is added. Then, for the assessment of the SB on circuit performances, an operational amplifier (Op-Amp) is designed using the SB-CNTFET compact model, and results are compared with a conventional CNTFET.
Keywords :
"CNTFETs","Operational amplifiers","Integrated circuit modeling","Schottky barriers","Gain","Mathematical model"
Conference_Titel :
Systems, Signals & Devices (SSD), 2015 12th International Multi-Conference on
DOI :
10.1109/SSD.2015.7348239
