• DocumentCode
    3706292
  • Title

    Conduction-band tail states of thermally grown GeO2 on Ge detected by internal photoemission spectroscopy

  • Author

    W. F. Zhang;C. H. Lee;T. Nishimura;A. Toriumi

  • Author_Institution
    Department of Materials Engineering, The University of Tokyo
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the band tail states near the conduction band edge of GeO2 by the internal photoemission (IPE) spectroscopy. The band tail states depend on how to form GeO2 on Ge, and is directly related to n-channel Ge FET performance.
  • Keywords
    "Logic gates","Energy measurement","Photonics","Atmospheric measurements","Voltage measurement","Electric fields","Thermal conductivity"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348530
  • Filename
    7348530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706292