DocumentCode :
3706302
Title :
Time domain measurements of charge pumping current
Author :
Masahiro Hori;Tokinobu Watanabe;Toshiaki Tsuchiya;Yukinori Ono
Author_Institution :
Univerisity of Toyama, 3140 Gofuku, Toyama 930-8555, Japan
fYear :
2014
fDate :
6/1/2014 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
The authors developed the method that can monitor the CP current in time domain. The current in the method is sufficiently accurate and reveals that the electron capture process completes far before the channel opens. The present method enables us to access fundamental events that take place in one cycle of the CP sequence and will give us detailed information that cannot be obtained by the conventional CP method.
Keywords :
"Time-domain analysis","Spontaneous emission","Current measurement","Charge carrier processes","Logic gates","MOSFET","Pulse measurements"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
Type :
conf
DOI :
10.1109/SNW.2014.7348540
Filename :
7348540
Link To Document :
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