Local heating effect on negative bias temperature instability in multiple-fin SOI FinFETs

In this work, both experimental assessment and 3D electron-thermal coupled Monte Carlo simulation have been used to investigate local heating effect on NBTI in multiple-fin p-channel SOI FinFETs. The results show that the peak temperature is 70K higher than room temperature under saturation operation. The larger |V_ds| with same V_gs stress causes severer degradation and the more fin number presents the more degradation. Therefore, the NBTI affected by local heating effect can´t be neglected during circuit operation.