• DocumentCode
    3706305
  • Title

    Electron transport in 2D crystal semiconductors and their device applications

  • Author

    Debdeep Jena;Mingda Li;Nan Ma;Wan Sik Hwang;David Esseni;Alan Seabaugh;Huili Grace Xing

  • Author_Institution
    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN USA
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we investigate the transport properties of 2D crystal semiconductors from two angles. For drift transport in traditional FETs, scattering mechanisms that limit the electron mobility are identified, and means to improve them vastly over currently reported values are presented. For low-power electronics, tunneling transport currents within monolayer p-n junctions, and interlayer tunneling currents between adjacent 2D semiconductor layers is discussed for TFETs.
  • Keywords
    "Tunneling","Crystals","Scattering","Graphene","P-n junctions"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348543
  • Filename
    7348543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706305