Title :
Oxygen-inserted SegFET: A candidate for 10-nm node system-on-chip applications
Author :
Nuo Xu;Hideki Takeuchi;Nattapol Damrongplasit;Robert J. Stephenson;Marek Hytha;Nyles Cody;Robert J. Mears;Tsu-Jae King Liu
Author_Institution :
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA
fDate :
6/1/2014 12:00:00 AM
Abstract :
An oxygen-inserted quasi-planar segmented channel MOSFET design is proposed and studied for monolithic system-on-chip applications. Projections indicate that it will provide for higher performance than bulk FinFET technology at the 10 nm node, due to higher field-effect carrier mobility, lower source/drain series resistance, and the benefit of super-steep retrograde well punchthrough-stopper doping.
Keywords :
"FinFETs","Doping","Logic gates","Performance evaluation","Silicon","Cutoff frequency"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348549
