Control of electron transport regimes via single- and multiple-donors in nano-channel SOI-FETs

In this work, we find systematic transitions of electron transport regimes by controlling the number of strongly-interacting P donors in SOI-FET nano-channels. We found that, as a function of the location and number of dopants, doped using a selective-doping technique, electron transport occurs via individual P donors (in samples with low N_D), via “clusters” of a few P donors (for higher N_D) and via many-donor QDs, which form complex energy bands (for highly-doped samples).