Title :
Negative capacitance in ferroelectric materials and its potential use for transistors with <60 mV/decade subthreshold swing
Author :
Asif Islam Khan;Sayeef Salahuddin
Author_Institution :
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA-94720
fDate :
6/1/2014 12:00:00 AM
Abstract :
Owing to the energy barrier that forms during phase transition and separates the two degenerate polarization states, a ferroelectric material could show negative differential capacitance while in non-equilibrium. The state of negative capacitance is unstable, but just as a series resistance can stabilize the negative differential resistance of an Esaki diode, it is also possible to stabilize a ferroelectric in the negative differential capacitance state by placing a series dielectric capacitor. In this configuration, the ferroelectric acts as a `transformer´ that boosts up the input voltage. The resulting amplification could lower the voltage needed to operate a transistor below the limit otherwise imposed by the Boltzmann distribution of electrons.
Keywords :
"Capacitance","Ferroelectric materials","Capacitors","Electric potential","Transistors","Resistance","Electrical engineering"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348553