Quantum size effects and non-equilibrium states in nanoscale silicon dioxide based resistive switches

The integration of microelectronics goes progressively on, and memory devices are now based on processes on the atomic scale. Thus, quantum size effects become relevant. Here we report on quantized conductance values in SiO₂ based resistive switches (ReRAMs) at room temperature. We modified the extended memristor model to account for quantum size effects. Our aim is to quantify and predict the impact of recently observed non-equilibrium states in ReRAMs on the stability of quantized conductance values.