Low-current and high-endurance logic operations in 4F2-compatible TaOx-based complementary resistive switches

Non-volatile redox-based resistive memories (ReRAMs) and matched select devices are the key enabler for future ultra-dense passive crossbar arrays. Complementary Resistive Switches (CRSs) inherently comprise a matched selector and memory device, thus offer a highly promising approach to realize memory and logic functionality in a single device. Here, we show the realization of vertically stacked TaO_x-based micro- and nano-CRS devices offering high endurance and the lowest currents for CRS cells to date (~200μA). Furthermore, two basic sequential logic operations in a single CRS device are realized with quasi-static sweeps and pulses. The results are confirmed by simulations using a dynamical TaO_x switching device model.