DocumentCode :
3706325
Title :
Highly functional three-terminal nanodot array device with almost independent input gates
Author :
Isamu Yoshioka;Takafumi Uchida;Masashi Arita;Akira Fujiwara;Yasuo Takahashi
Author_Institution :
Graduate school of Information Science and Technology, Hokkaido University, Sapporo, 060-0814, Japan
fYear :
2014
fDate :
6/1/2014 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
Nanodot array devices work as a function-selectable logic device. This functionality can be achieved by the multi-input gates coupled to the same nanodots. In this report, we show the complicate functionality by the use of a nanodot array with almost independent two input gates, which is not predicted from the orthodox theory. The phenomena may be attributed to illegal current peak modulation caused by a very small electric field applied through the nanodot array in the few electron regime.
Keywords :
"Logic gates","Arrays","Nanoscale devices","Oscillators","Silicon","Couplings","Nanowires"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
Type :
conf
DOI :
10.1109/SNW.2014.7348562
Filename :
7348562
Link To Document :
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