Title :
The effect of interfacial oxide and high-κ thickness on NMOS Vth shift from plasma-induced damage
Author :
Chih-Yang Chang;Jie Zhou;Chi-Nung Ni;Osbert Chan;Shiyu Sun;Wesley Suen;Sherry Mings;Malcolm Bevan;Patricia M. Liu;Peter Hsieh;Chorng-Ping Chang;Raymond Hung
Author_Institution :
Silicon Systems Group, Applied Materials, Inc., Santa Clara, CA 95054
fDate :
6/1/2014 12:00:00 AM
Abstract :
Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO2 was varied from 15Å to 25Å. The thickness of the interfacial layer (IL) with N2O/H2 was also varied from 5Å to 10Å. The threshold voltage (Vth) shift was observed to be greater in the thinner oxide using the same plasma condition. There was no significant effect with different IL thickness between 5Å and 10Å.
Keywords :
"Hafnium compounds","Plasmas","MOSFET","Dielectrics","Logic gates","Antennas","Reliability"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348568
