DocumentCode :
3706340
Title :
Interacting donor atoms in silicon: Valley-orbit coupling
Author :
Mykhailo V. Klymenko;Francoise Remacle
Author_Institution :
Department of Theoretical Physical Chemistry, University of Liege, Belgium
fYear :
2014
fDate :
6/1/2014 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
In the framework of the Burt-Foreman envelope function theory and effective-mass approximation, we develop a theoretical model for an arbitrary number of interacting donor atoms embedded in silicon. The model takes into account the effective mass anisotropy and the valley-orbit coupling. Taking as an example diatomic phosphorus molecular ion, we investigate the impact of the orientation and internuclear distance on the electronic spectrum and envelope functions. This approach allows to analyze the valley composition of the wave functions and its dependence on the internuclear distance.
Keywords :
"Silicon","Couplings","Function approximation","Impurities","Wave functions","Lattices"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
Type :
conf
DOI :
10.1109/SNW.2014.7348577
Filename :
7348577
Link To Document :
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