Back biases and positive bias temperature instability on low and high doped ultrathin body and buried oxide siliocn-on-insulator

This study addresses low- and high-doped ultra-thin body and buried oxide silicon-on-insulator (UTBB-SOI) nFETs related to back biases and reliability. The low-doped device shows wider tuning range and lower subthreshold and gate leakage despite lower transconductance. Positive bias temperature instability in low-doped UTBB-SOI degraded lower than that in high-doped device.